History-Dependent Impact Ionization Theory Applied to HgCdTe e-APDs

Abstract

The variation of the gain and the excess noise factor in HgCdTe avalanche photodiodes (APDs) with different junction geometries are compared with published theoretical and numerical work. It is shown that, although some features of the gain curves are reproduced, such as the constant exponential increase in the gain, the theoretical work fails to predict the observed variation of the gain as a function of multiplication layer width. In contrast, a new analytical gain model based on local impact ionization coefficients and a first direct comparison of the prediction of history-dependent impact ionization theory are shown to give a good general fit to the experimental gain data. A generic model of the gain in HgCdTe APDs has been obtained by fitting the analytical local model to gain curves of APDs with various geometries and cut-off wavelengths. The study of different hypotheses on the electric field dependence of the dead-space length and the saturation value of the impact ionization coefficient has shown that a variable dead-space effect has a direct impact on the excess noise of APDs, which is why exact excess noise measurements are necessary to achieve a pertinent estimation of the nonlocal impact ionization function.