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https://doi.org/10.1016/0022-0248(74)90262-0
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Cite Journal: Journal of Crystal Growth |  Publication Date: Dec 1, 1974 |
 Citations: 25 |
Abstract This letter reports on the formation of hillocks on epitaxial GaAs prepared by reacting trimethylgallium (TMG) and arsine. Layers were grown over a wide range of As : Ga ratios (4 : 1 to 15 : 1) in the gas phase. Hillocks were observed at growth rates in excess of 0.5 μm/min, irrespective of the gas composition.
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