High‐Speed Preparation of Highly (100)‐Oriented CeO2 Film by Laser Chemical Vapor Deposition

Abstract

CeO2 films were prepared at deposition temperature ranged from 947 to 1096 K (corresponding laser power was from 52 to 185 W) on (100) LaAlO3 single crystal substrate by laser chemical vapor deposition. At deposition temperature of 1027–1096 K (laser power was from 115 to 185 W), highly (100)‐oriented CeO2 films with wedge‐caped columnar grains were prepared, whose epitaxial growth relationship was CeO2 [100]//LAO [100] (CeO2 [010]//LAO [011]). Their full width at half maximum of the ω‐scan on the (200) reflection and that of the ϕ‐scan on the (220) reflection were 0.8°–1.8° and 0.7°–1.2°, respectively. The highest deposition rate at which CeO2 film with pure (100) preferred orientation could be obtained was 30 μm h−1.