Morphology and preferred orientation of Y 2O 3 film prepared by high-speed laser CVD

Abstract

Yttria (Y 2O 3) films were prepared at high deposition rates of up to 83 nm/s (300 μm/h) by laser chemical vapor deposition (LCVD) using an Y(dpm) 3 precursor. The effects of deposition conditions, mainly total gas pressure and laser power, on morphology, deposition rate and preferred orientation were studied. Plasma was produced around the substrate over a critical laser power resulting in significant increases in deposition temperature and deposition rate. The high deposition rate (300 μm/h) by LCVD was about 100 to 1000 times as high as those by conventional CVD. The morphology of Y 2O 3 films changed from faceted and columnar structures with high (400) orientation to a columnar structure with high (440) orientation, and finally to a cone-like structure with moderate (440) orientation with increasing total gas pressure (P tot).