Abstract
The initial growth behaviors of GaSb on a GaAs substrate were studied using a high-resolution electron microscope (HRTEM). Four types of GaSb islands were observed by HRTEM. HRTEM micrographs showed that strain relaxation mechanisms were different in the four types of islands. Although 90° misfit dislocations relieve misfit strain in the islands, additional mechanisms are required to relax the remaining strain. The existence of elastic deformation near the surface related to dislocations and intermediate layers between GaSb and GaAs were demonstrated in island growths. Finally, the generation of planar defects to relieve strain was observed in a specific GaSb growth.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
