Abstract
The results of high-resolution, real-space observations of the behaviors of elements on surfaces and at interfaces during growth of Ga on Si(111)-∛×∛-Ag are presented. Site exchange and surrounding other elements were directly observed using a high-resolution ultrahigh vacuum scanning electron microscope (SEM) newly combined with characteristic x-ray spectroscopy under a grazing detection-angle condition. Compared with the resolution of conventional SEM-energy dispersive x-ray spectrometry (several μm), resolution in elementary analysis has been significantly improved due to a small beam size and cut off of x-rays from deep regions, and local elementary analysis of surface structures of only about 10–20 nm in size is possible by the present method.
Published Version
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