High-quality InGaP and InGaP/InAlP multiple quantum well grown by gas-source molecular beam epitaxy

Abstract

Using gas-source molecular beam epitaxy, we have obtained high-quality GaInP and (AlGa)InP epilayers lattice-matched to (100) GaAs substrates. All grown layers exhibited mirror-like surfaces. For a 1.7 μm thick Ga 0.5In 0.5P film, the Hall electron mobility was 3400 and 30,000 cm 2 /V·s at 300 and 77 K, respectively. The luminescence wavelength of (Al x Ga 1− x )InP samples ranged from 680 nm (for GaInP) to 590 nm (for AlInP) at room temperature, and from 644 to 513 nm at 77 K. The multiple quantum well (MQW) structure with well width of 40 Å showed strong luminescence intensity with wavelength of 647 nm (300 K) or 622 nm (80 K). The satellite peaks can be detected in double-crystal X-ray (DCXR) diffraction measurements of the MQW samples, which indicates the perfect structural periodicity.