Abstract
We present a source switching procedure for the growth of abrupt interfaces in AlInP GaAs multiple quantum well heterostructures grown by gas source molecular beam epitaxy. The switching procedures were optimized through characterization by cathodoluminescence, room temperature absorption, double crystal X-ray diffraction and dynamic simulation, and high resolution transmission electron microscopy. Atomically flat AlInP-on-GaAs and GaAs-on-AlInP interfaces were obtained by avoiding exposure of the GaAs surface to phosphorous before the growth of AlInP and by optimizing the pump-out intervals of the residual As 2 and P 2 between layers. The optimum pump-out interval was determined to be 20 s for As 2, and 10 s for P 2.
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