High-performance AIIIBV photodetector for on-chip optical interconnects

Abstract

The development of A^IIIB^V photodetectors with subpicosecond response time seems to be one of core problems in modern optoelectronics. Its solution is required, in particular, for the implementation of high-speed and high-level optical interconnections in ultra-large-scale integrated circuits. Previously, we proposed the concept of a photodetector with controlled relocation of carrier density peaks whose structure allows for mobility and lifetime modulation and, as a result, reduction of back-edge photocurrent lag in photosensitive <i>p-i-n</i> heterojunction. In this paper, we perform the analysis of electron and hole transport in the aforementioned sensor using a time-domain drift-diffusion semiclassical model. Numerical solution of the system that contains the two-dimensional continuity and Poisson equations allows us to evaluate key characteristics of the photodetector with controlled relocation and to modify its structure and photoreceiver circuit reasonably.