Abstract
In this article, quantum-dot infrared photodetectors (QDIPs) with 10- and 30-period InAs∕GaAs quantum-dot structures are investigated. High responsivity of 2.37A∕W and detectivity of 2.48×1010cmHz1∕2∕W for 30-period QDIPs under 10K are observed at −2.7 and 1.2V, respectively. Almost symmetric photocurrents and dark currents under positive and negative biases are observed for both devices, which indicate a minor influence of the wetting layer on the performance of QDIPs. Lower dark current and increased photocurrent for the 30-period QDIPs would predict a better performance for devices with over a 30-period QD structure.
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