Abstract
An analysis has been done for the dark current and detectivity of quantum dot infrared photodetectors (QDIPs). Dark current being the most influential factor in the performance of QDIPs has been studied with utmost importance. The effect of drift velocity on the dark current model for QDIPs has been taken into consideration. The effect of variation of electric field on dark current at different temperature values has been analyzed. Detectivity, which is an important figure of merit for measuring the performance of the device, has also been analyzed in accordance with the change in electric field. The effect of the change in the area of the photodetector on the dark current has also been analyzed. This analysis has been done by considering the drift velocity of electrons along with two electron transport mechanisms — the microscale and nanoscale transport and the mobility.
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