Abstract
A solution-processable high k dielectric materials based on polyimide/zirconium dioxide (PI-ZrO2) for organic thin film transistors (OTFTs) is demonstrated. To study the effect of the ZrO2 content on the properties of the dielectric layer, a series of PZn films (n = 0, 2, 5, 8, 10, 12, and 15, which are the weight percentage of ZrO2 in the film) were prepared. The results showed that all of the prepared hybrid films had a high transmittance of 96–99%. The nondestructive Zr K-edge XANES analysis revealed that the absorption intensity was proportional to the ZrO2 content. EXAFS analysis indicated that the ZrO2 formed bigger clusters in the film than in the solution state. Water and diiodomethane contact angle analysis found that the PZ12 film had the largest contact angles, lowest surface energy, and lowest water absorbance, which results in the least structural defects and highest carrier mobility. Electrical property analysis indicated that the dielectric constant of the films increased from 4.04 for the PZ0 film to 8.10 for the PZ12 film, but then dropped for the PZ15 film. All current leakages (−2 MV/cm) were less than 10−9 A/cm. The carrier mobility in the PZ0 film was 2.78 × 10−1, up to 4.15 × 10−1 for the PZ12 film, but down to 3.34 × 10−1 for the PZ15 film. The Ion/Ioff ratio was 2.3 × 103 for PZ0, up to 1.4 × 105 for PZ12, but down to 1.8 × 104 for PZ15. The hybrid dielectric devices showed better performance. This work reveals great potential for hybrid dielectric materials for OTFT applications.
Published Version
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