Highly transparent low resistance ATO/AgNWs/ATO flexible transparent conductive thin films

Abstract

Indium-free flexible transparent conductive thin films (TCFs) composed of silver nanowire (AgNW) networks and Sb doped SnO2 (ATO) layers were prepared on polyethylene terephthalate (PET) substrates. The ATO layers were deposited via radio frequency (RF) magnetron sputtering at room temperature. The AgNWs were achieved via a modified polyol reduction method and embedded between the ATO layers. The effects of AgNW networks and ATO layers on electrical and optical properties of the ATO/AgNWs/ATO flexible tri-layer thin films are investigated. The ATO layers can improve the optical transmittance and reduce the resistivity of tri-layers, and the corresponding mechanisms are proposed. Typically, an ATO/AgNWs/ATO flexible tri-layers show a high figure of merit value (30.06 × 10-3 Ω-1) with a low sheet resistance of 7.1 Ω/sq. and a high transmittance of 85.7%. Meanwhile, the tri-layers present excellent mechanical flexibility, and the ATO layers acted as the protecting layers improve the adhesive and environmental stability at high temperature and humidity for the ATO/AgNWs/ATO flexible tri-layers. These results indicate that ATO/AgNWs/ATO flexible tri-layer thin films can be useful for the fabrication of wearable electronic devices.