Highly Stretchable MoS2‐Based Transistors with Opto‐Synaptic Functionalities (Adv. Electron. Mater. 9/2022)

Abstract

Stretchable Opto-Synaptic Transistors In article number 2200238, Na Li, Guangyu Zhang, and co-workers demonstrate highly stretchable monolayer MoS2 field effect transistors with buckled structures. These devices exhibit excellent electrical properties under a large uniaxial/biaxial stretching or oft-repeated tensile force, and such stretchable devices could be well applied to mimic synapses for neuromorphic computation.