Strain effects on monolayer MoS2 field effect transistors

Abstract

In this work, the strain effect on monolayer MoS2 field effect transistors is investigated by density functional (DFT) calculation and quantum transport simulation. DFT calculation reveals that the tensile strain decreases the effective mass, while compressive strain increases the effective mass. However, ballistic quantum transport simulation shows that a smaller effective mass does not always result in better performance for a 5 nm gate length transistor. This is because for field effect transistors in the ultimate scaling region, the suppression of off-state tunneling current is the greatest concern in device design. The effect of scattering is considered by a simple approach and is shown to have a stronger impact on the intrinsic delay for the 10 nm gate length transistor.