Abstract
B-doped ZnO films were prepared on Corning 7059 glass by atomic layer deposition (ALD) using diethylzinc (DEZn) and H2O as reactant gases, and diborane (B2H6) as the dopant gas. The stability of the electrical properties of the obtained ZnO films was investigated. Variations in the electrical properties of the ZnO films with air exposure and heat treatment were observed. The stability of the electrical properties of the ZnO films grown by metalorganic vapor deposition (MOCVD) and photo-MOCVD was also investigated. It was found that the electrical properties of ZnO films grown by ALD were very stable, indicating that the ALD technique is attractive for the deposition of high-quality transparent conducting ZnO films.
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