Abstract
ZnO films are prepared on Ag-coated glass substrates by wet chemical method at low temperature using Zn(NO 3)·6H 2O and dimethylamine borane complex (DMAB). The structural, electrical and optical properties of ZnO films are investigated by X-ray diffraction, scanning electron microscope, four-point probe method and photoluminescence, respectively. The ZnO film deposited at 90 °C is the most compact films with a c-axis preferred orientation. The cooling rate affects the optical and electrical properties of ZnO films dramatically. The ZnO films cooled at −15 °C exhibit the lowest electrical resistivity of 0.525 Ω cm and the strongest photoluminescence in visible light. The increase of the conductivity and the enhancement of the photoluminescence are attributed to the increase of oxygen vacancies in the films.
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