Abstract
The polarization characteristics of a 370nm GaN-based ultraviolet light-emitting diode (UV-LED) were controlled by a subwavelength grating (SWG) on a low-refractive-index SiO2 underlayer inserted between the SWG and LED surface. Highly polarized UV emission was demonstrated by utilizing the Bloch eigenmode resonance in the SWG structure for the two orthogonal polarization states. The polarization ratio of the emission reached 16:1, which is the highest reported to date for direct emission from a GaN-based UV-LED. The decrease in UV emission was also prevented by suppressing the diffracted plane wave and by increasing the amplitude of the wave incident onto the SWG structure; this increase was achieved by taking advantage of the low refractive index of SiO2.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
