Abstract
Self-organized and highly ordered GaN nanorods were grown without catalyst onr-plane sapphire using a combination of molecular beam epitaxy and metal–organicvapor-phase epitaxy. AlN nucleation centers for the nanorods were prepared bynitridation of the sapphire in a metal–organic vapor-phase epitaxy reactor, while thenanorods were grown by molecular beam epitaxy. A coalesced two-dimensionalGaN layer was observed between the nanorods. The nanorods are inclined by62° towards the -directions of the a-plane GaN layer. The high degree of ordering and the structural perfection were confirmedby micro-photoluminescence measurements.
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