Abstract
The effects of high-pressure water vapor annealing (HWA) on the photoluminescence (PL) of quantum-sized silicon materials have been studied for as-anodized or electrochemically oxidized heavily doped n-type porous Si (PS) and electrochemically oxidized p-type PS. PL efficiency and stability are markedly enhanced in all HWA-treated samples. PL peak wavelength remains almost unchanged except for n+-type PS in which a large redshift in the PL emission band was observed due to a structural nonuniformity in the depth direction. The high PL efficiency and stability of HWA-treated PS are attributed mainly to a suppression of nonradiative defect density by complete passivation of silicon nanocrystal surfaces. On the basis of these results, HWA is employed to improve the electroluminescence (EL) characteristics. The device fabricated using an HWA-treated anodized pn+ junction shows improved EL efficiency and stability.
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