Abstract
The polarization memory (PM) effect in the blue and red photoluminescence (PL) of p-type porous Si (PS) treated by high-pressure water vapor annealing (HWA) has been investigated. HWA induces a significant blue PL emission at about 450 nm, together with a drastic enhancement of the red PL intensity. The polarization memory of the red emission band is anisotropic and is in agreement with emission from quantum sized Si nanocrystals, whereas that of the blue band is high and isotropic, indicating an emission mechanism related to localized states in the amorphous Si oxide surrounding the Si skeleton of the PS layer after HWA. HWA does not induce any blue emission in PS that was electrochemically oxidized (ECO) beforehand because the electrochemically grown oxide tends to prevent the formation of blue-emitting amorphous oxide upon HWA. The PM of ECO-PS at low emission energies is anisotropic, but in a direction 45° rotated compared to that of PS treated by HWA. This unique behavior may be related to the electrical nature of electrochemical oxidation. HWA increases the PM of ECO-PS. This could be attributed to the enhanced passivation induced by HWA.
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