Abstract
The effects of a combination of thermal oxidation at various temperatures and high-pressure water vapor annealing (HWA) on the luminescence and structural characteristics of nanocrystalline porous Si (PSi) have been investigated. The influences of initial PSi porosity and excitation power have also been studied. Strong, stable, and single-band blue emission was obtained when PSi was first treated by thermal oxidation above 800 °C and then by HWA. This blue emission can coexist with the conventional red emission band of Si nanocrystals when PSi is not sufficiently oxidized. The blue emission may originate from localized states in the Si oxide or at the silicon/oxide interface. HWA very efficiently boosts the emission from these localized states by increasing the quality of the oxide network. This result is useful for the realization of short-wavelength Si-based optoelectronic devices.
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