Abstract
We study injection GaAs-based microdisk lasers capable of operating at room and elevated temperatures. A novel type of active region is used, namely InGaAs quantum well-dots representing a dense array of indium-rich islands formed inside an indium-depleted residual quantum well by metalorganic vapor phase epitaxy. We demonstrate a high output power of 18mW, a differential efficiency of about 31%, and a peak electrical-to-optical power conversion efficiency of 15% in a 31μm diameter microdisk laser. The continuous-wave lasing is observed up to 110°C.
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