Abstract
We report on optoelectronic devices based on novel type of active region - quantum well-dots (QWD) hybrid nanostructures. This hybrid type of the active region can be described as a quantum well, which has an ultradense array of narrow-gap In-rich regions with the size of 20-30 nm, which serve as the localization centers of charge carriers. Such QWD structures can be formed spontaneously during the MOVPE (metalorganic vapor phase epitaxy) deposition of InxGa1-xAs (0.3<; x<0.5) on GaAs substrate. Optimal average thickness and composition of InxGa1-xAs to achieve maximal PL intensity and photocurrent in QWD structures are determined. Characteristics of edge-emitting lasers based on 5 QWD layers are described. Advantages of using QWD medium in light-emitting and photovoltaic devices are discussed.
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