Abstract
Inductively coupled plasma (ICP) etching of a WNx film using an auxiliary rf plasma source is applied for preparing X-ray mask absorber patterning. WNx is effectively etched with SF6 gas plasma and the addition of Ar and N2 results in higher dissociation of the SF6 gas and sidewall passivation effect, respectively. Pattern distortion observed for high-aspect-ratio patterns is minimized by multistep etching and an O2 plasma treatment process. As a result, 0.18 µm WNx line and space patterns with vertical sidewall profiles are successfully fabricated.
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