Abstract
ITO (Indium Tin Oxide) thin film with a sandwich structure that comprises two layers of oxygen-poor layer and an oxygen-rich layer was deposited on glass substrates by DC sputtering using a ceramic target. The effect of structure on the photoelectric properties of the ITO thin film was investigated. The results indicated that the as-prepared ITO film with sandwich structure showed high (4 0 0) preferred orientation. Simultaneously, the ITO thin film with sandwich structure exhibited excellent optoelectronic properties, which has a low resistivity of 1.384 × 10−4 Ωcm, high visible light transmittance of 88.34% and a high IR reflectivity of 88.37%. Excellent optoelectronic properties can meet the infrared stealth requirements for aircraft windows.
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