Abstract
The Pb(Zr 0.20Ti 0.80)O 3/(Pb 1− x La x)Ti 1− x /4O 3 ( x = 0, 0.10, 0.15, 0.20) (PZT/PLT x ) multilayered thin films were in situ deposited on the Pt(1 1 1)/Ti/SiO 2/Si(1 0 0) substrates by RF magnetron sputtering technique with a PbO x buffer layer. With this method, all PZT/PLT x multilayered thin films possess highly (1 0 0) orientation. The PbO x buffer layer leads to the (1 0 0) orientation of the multilayered thin films. The effect of the La content in PLT x layers on the dielectric and ferroelectric properties of the PZT multilayered thin films was systematically investigated. The enhanced dielectric and ferroelectric properties are observed in the PZT/PLT x ( x = 0.15) multilayered thin films. The dielectric constant reaches maximum value of 365 at 1 KHz for x = 0.15 with a low loss tangent of 0.0301. Along with enhanced dielectric properties, the multilayered thin films also exhibit large remnant polarization value of 2 P r = 76.5 μC/cm 2, and low coercive field of 2 E c = 238 KV/cm.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
