Abstract
This paper proposes a 3-D simulation study of high-k SOI GaN FinFET. High ON current, faster- speed, lower subthreshold swing is obtained thus suppressing the short channel effects more effectively. Extremely low OFF current is obtained due to bulk conduction in the GaN channel layer, which can be fully depleted. Various electrical parameters obtained are compared with Bulk GaN FinFET and Conventional FinFET (Si-based). Proposed FinFET is designed by using a metal gate and high-K oxide (HfO2) is used as the gate oxide layer. The proposed High-k SOI GaN FinFET has come out as a very viable option because it is known for high performance and high-speed integrated circuits; and also for high frequency and high power applications due to using high mobility GaN fin instead of silicon fin used in conventional devices.
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