Abstract
In this paper, a Junction-Less Tunnel Field-Effect Transistor (JLTFET) with a SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> stacked gate oxide is proposed for steep average subthreshold swing (SS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">avg</sub> ) and high ON current. The high-k dielectric layer provides high Band-to-Band Tunneling (BTBT) efficiency with increasing gate voltage, which makes high ON current and effectively improve subthreshold characteristics for steep average SS. Moreover, low-k dielectric layer has been used in stacked structure to achieve low OFF current. The simulation results show the proposed hetero dielectric gate oxide stack based JLTFET can achieve steep average SS (54 mV/decade) in comparison with conventional JLTFET (78 mV/decade).
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call