A new Junction-Less Tunnel Field-Effect Transistor with a SiO2/HfO2 stacked gate oxide for DC performance improvement

Abstract

In this paper, a Junction-Less Tunnel Field-Effect Transistor (JLTFET) with a SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> stacked gate oxide is proposed for steep average subthreshold swing (SS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">avg</sub> ) and high ON current. The high-k dielectric layer provides high Band-to-Band Tunneling (BTBT) efficiency with increasing gate voltage, which makes high ON current and effectively improve subthreshold characteristics for steep average SS. Moreover, low-k dielectric layer has been used in stacked structure to achieve low OFF current. The simulation results show the proposed hetero dielectric gate oxide stack based JLTFET can achieve steep average SS (54 mV/decade) in comparison with conventional JLTFET (78 mV/decade).