High-gain lateral p-n-p bipolar action in a p-MOSFET structure

S Verdonckt-Vandebroek,J.C.S Woo,J You,S.S Wong

doi:10.1109/55.145068

High-gain lateral p-n-p bipolar action in a p-MOSFET structure

S Verdonckt-Vandebroek, J.C.S Woo + Show 2 more

https://doi.org/10.1109/55.145068

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Journal: IEEE Electron Device Letters	Publication Date: Jun 1, 1992
Citations: 32

Affiliation: University of California, Los Angeles, Cornell University

#Bipolar Junction Transistors #CMOS Technologies + Show 8 more

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Abstract

Lateral p-n-p bipolar junction transistors (BJTs) fabricated using a bulk 0.25 mu m CMOS technology are presented. The devices are structurally the same as p-MOSFETs in which the gate and the n-well are internally connected to form the base. The p-n-p BJT has an adjustable current gain which can be higher than 1000 and its peak cutoff frequency is 3.7 GHz. Since the lateral p-n-p BJT is fully process compatible with submicrometer CMOS and/or BiCMOS technologies, extension to a BiCMOS and/or complementary BiCMOS process is readily achieved.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>

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