Abstract

We fabricated an In/sub 0.75/Ga/sub 0.25/As/In/sub 0.52/Al/sub 0.48/As pseudomorphic high electron mobility transistor (PHEMT) with a gate length (L/sub g/) of 400 nm on a [411]A-oriented InP substrate by molecular beam epitaxy (MBE) and obtained a maximum transconductance (g/sub m/) of 1.6 S/mm at 300 K, which is almost the same as those of ever reported for HEMTs with similar L/sub g/. Furthermore, the g/sub m/ reached 2.2 S/mm at 16 K, which is the highest value ever reported for HEMTs. This PHEMT also showed a much enhanced cutoff frequency (f/sub T/) of 165 GHz at 16 K, compared with its room temperature value (125 GHz).

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