Abstract
In this paper, we report the device fabrication and characteristics of 50-nm-gate pseudomorphic In/sub 0.7/Ga/sub 0.3/As/In/sub 0.52/Al/sub 0.48/As high electron mobility transistors (HEMTs) grown on a [411]A-oriented InP substrate by molecular beam epitaxy, which is the first report, to our knowledge, of HEMTs grown on any InP substrate except a conventional [100]-oriented InP substrate. The pseudomorphic HEMTs on the [411]A InP substrate showed a higher electron mobility than those on the [100] InP substrate at not only low temperatures but also room temperature. The [411]A HEMTs provided excellent DC and RF characteristics, showing a very high transconductance (1.1 S/mm) and one of the best cutoff frequencies (355 GHz) ever reported.
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