Abstract
An extremely high maximum transconductance gmmax of 2.25 S/mm and a cutoff frequency fT of 310 GHz was achieved at a cryogenic temperature (16 K) in a 195-nm-gate In0.75Ga 0.25As/In0.52Al0.48As high electron mobility transistor (HEMT) fabricated on a (411)A-oriented InP substrate by molecular beam epitaxy, compared with room temperature values (gmmax=1.78 S/mm and fT=245 GHz). These significantly enhanced gmmax and fT values are attributed to a high electron velocity of up to 4.9times107 cm/s due to suppressing phonon scattering in the In0.75Ga0.25As/In0.52Al0.48 As HEMT with (411) A super-flat InGaAs/InAlAs interfaces (effectively atomically flat heterointerfaces over a wafer-size area)
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