Abstract
Improved characteristics of the GaInAs/InP hot electron transistor (HET) fabricated by organc-metallic vapour phase epitaxy (OMVPE) are reported. The common-emitter current gain was 8 for the base thickness of 40 nm at 77 K. This result shows a promising potential of the heterostructure material system of GaInAs/InP for high-speed ballistic electron devices.
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