Characterization of double heterojunction GaAs/AlGaAs hot electron transistors

N Yokoyama,S Hiyamizu,K Imamura,T Ohshima,K Kondo,H Nishi,S Muto

doi:10.1109/iedm.1984.190771

Characterization of double heterojunction GaAs/AlGaAs hot electron transistors

N Yokoyama, S Hiyamizu + Show 5 more

https://doi.org/10.1109/iedm.1984.190771

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Publication Date: Jan 1, 1984

Citations: 2

Affiliation: Fujitsu (Japan)

#Tunneling Hot Electron Transistor #Common-emitter Current Gain + Show 8 more

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Abstract

A tunneling hot electron transistor (HET) using MBE GaAs/AlGaAs double heterojunctions has been demonstrated. This device uses a selective n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -GaAs growth technique for forming ohmic base contacts. The common-emitter current gain was measured as 1.3 at 40K. This paper covers the operation principles of the HET (reflecting hot electron transfer mechanisms) and projects performance of this device using a Monte Carlo method.

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