High‐current AlGaN/GaN high electron mobility transistors achieved by selective‐area growth via plasma‐assisted molecular beam epitaxy

Abstract

We report on AlGaN/GaN high electron mobility transistors (HEMTs) for high current operation achieved by selective area growth (SAG) technique based on plasma‐assisted molecular beam epitaxy (PAMBE). Significant improvement in DC characteristics of the multiple‐gate‐finger HEMTs was demonstrated when SAG was employed. Furthermore, when group of HEMTs were interconnected, the resulted large‐periphery device, with the total gate width of 5.2 mm, exhibited a maximum current of 1.75 A and an on‐state resistance of 4.76 mΩ cm2, showing the efficacy of PAMBE‐SAG to fabricate GaN‐based HEMTs for high‐power applications.