High yield synthesis and study of Cu substitution on characteristics and dielectric properties of MgO nanostructures

Abstract

High-permittivity materials are becoming more popular due to the electrical and electronic industrial development. Single composition materials are well known to fall short of high permittivity requirements. So, in this article, we report pure and Cu (5%, 7%, 9%, and 11%) doped MgO nanostructures synthesized by reverse micelle method and study of their dielectric properties. Energy Dispersive Analysis of X-rays (EDAX), Powder X-ray Diffraction (PXRD), diffused reflectance UV–Vis spectroscopy (DR-UV-Vis), Dynamic Light Scattering (DLS), photoluminescence (PL), Raman spectroscopy and Broadband Dielectric Spectroscopy (BDS) are among the characterization methods used. Each synthesized sample crystallizes in cubic crystal system. As Cu doping increases from 5% to 11%, the average crystallite size dwindles from 22 to 10 nm. The bandgap is reduced from 5.71 eV to 2.58 eV as per the optical results from DR-UV-VIS spectroscopy. The intensity and surface defects are correlated by PL spectra. Raman peak shifts to the higher angle side, which is related to XRD and associated with a reduction in average crystallite size. For pure and all doping concentrations, the dielectric constant and the dissipation factor decreases with the increment in frequency which is a peculiar behaviour of dielectric materials.