Abstract
Pure and Ni-doped MgO nanostructures were synthesized using reverse micelle approach, which produced a size distribution with narrow range effectively. By using X-ray diffraction, the face cantered cubic structure of each sample was confirmed. Energy dispersive analysis of X-ray confirms composition of all the samples. By using the high-resolution transmission mode of electron microscopy, the morphology and size of the nanostructure were validated. Utilizing reflectance spectra, the Kubelka–Munk equation has been used to calculate the optical bandgap which is ref shifted with doping. Vibrational mode analysis was done using Raman spectroscopy. Broadband dielectric spectroscopy was used to measure the dielectric parameters revealing improved dielectric performance for Ni doped MgO nanostructure. Because of the generation of oxygen vacancies by dopant addition, lower frequency dielectric loss and a higher dielectric constant were achieved. The impedance behavior in various frequency regimes demonstrated how effectively conductive grains and insulating grain borders contributed. Looking at the literature survey, this is very first attempt to study the temperature and frequency dependent dielectric study for Ni doped MgO nanostructure.
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