Abstract
4H-SiC diodes with 6 kV blocking capability, low forward voltage drop (4.2 V at 100 A/cm2, 5.8 V at 500 A/cm2), and very small recovery time (≤ 7 ns) have been demonstrated for the first time. Experimental results can be explained by the combination of high lifetime across the major part of the base and the presence near the metallurgical boundary of the p+n junction of a thin layer with a very small carrier lifetime.
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