Abstract
We have fabricated 1 kV 4H and 6H SiC Schottky diodes utilizing a metal-oxide overlap structure for electric field termination. This simple structure when used with a high barrier height metal such as Ni has consistently given us good yield of Schottky diodes with breakdown voltages in excess of 60% of the theoretically calculated value. This paper presents the design considerations, the fabrication procedure, and characterization results for these 1 kV Ni-SiC Schottky diodes. Comparison to similarly fabricated Pt-SiC Schottky diodes is reported. The Ni-SiC ohmic contact formation has been studied using Auger electron spectroscopy and X-ray diffraction. The characterization study includes measurements of current-voltage (I-V) temperature and capacitance-voltage (C-V) temperature characteristics. The high-temperature performance of these diodes has also been investigated. The diodes show good rectifying behavior with ON/OFF current ratios, ranging from 10/sup 6/ to 10 at 27/spl deg/C and in excess of 10/sup 6/ up to 300/spl deg/C.
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