Abstract
Silicon carbide Schottky and bipolar diodes have been fabricated with a breakdown voltage of 3.3 kV. Diodes have been packaged and measured up to 300°C. The Schottky diode shows an increase of voltage drop with temperature and a reverse recovery charge independent from temperature. The PiN diode reverse recovery charge is x20 at 300°C compared to that of the Schottky diode. 55% of the stressed bipolar diodes at 20 A show a very small forward voltage drift. The switching losses of these stressed diodes are reduced by 20%. Substrate quality enhancement makes large SiC component fabrication possible (25mm2 Schottky diodes) and bipolar components show very small tension drift with temperature.
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