Abstract
A dual-material structure of lattice-matched GaInP on GaAs has a calculated figure of merit which is approximately 60 times better than Si and 5 times better than GaAs. In this work, the theoretical performance of the GaInP/GaAs structure is presented and experimental data for Ni on GaInP/GaAs Schottky rectifiers is presented. The Ni on GaInP/GaAs Schottky rectifiers have a breakdown voltage of ∼80 V and low reverse leakage current. Comparable Ni on GaAs Schottky rectifiers have a breakdown voltage of ∼20 V and significantly higher reverse leakage current. The GaInP/GaAs rectifiers’ forward characteristics have a current–voltage extracted φBn of 1.0 eV with an ideality factor of 1.06. This dual-material structure of GaInP/GaAs appears to be a promising candidate for improving power device performance.
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