High-Voltage Electron Injection Enhanced TC-LIGBT on 1.5- $\mu \text{m}$ -Thin SOI Layer for Reducing the Forward Voltage Drop

Abstract

In this paper, a new high-voltage electron injection enhanced tridimensional channel lateral insulated gate bipolar transistor (EIETC-LIGBT) on 1.5- $\mu \text{m}$ -thin silicon-on-insulator (SOI) layer is proposed to reduce the forward voltage drop. Based on the previous TC-LIGBT we have proposed, an extra floating p-layer is added at the emitter side of the proposed EIETC-LIGBT. The region locating between the separated p-body cells and the floating p-layer is the high doped n-type electron injection efficiency modulation (EIEM) region. Above the EIEM region, several virtual polygate structures connected to the emitter are fabricated between the separated p-body cells and the floating p-layer. The highly doped EIEM region can help the proposed structure to reduce the forward voltage drop by increasing the electron injection efficiency. The virtual gate structures are contributed to the forward-biased safe operating area of the proposed structure. By optimizing the doping of the EIEM region and the width of the virtual gate structures, an EIETC-LIGBT with the forward voltage drop of 3.4 V at $V_{\mathrm {{GE}}}= 10$ V and $J_{\mathrm {{CE}}}= 100$ A/cm $^{\mathrm {{2}}}$ can be achieved, which has an improvement of 17% compared with the previous TC-LIGBT structure on the same thin SOI layer without sacrificing the current capability.