Abstract
High voltage electron beam lithography experiments on thin films of tungsten trioxide are reported. For linear doses around 10 mC/cm at 200 kV, a negative resist behavior is observed after development in a NaOH solution. Features with dimensions as low as 15 nm with aspect ratios up to 10, exhibiting weak size fluctuations and vertical sidewalls are routinely achieved. Proximity effects are found to be negligible allowing the fabrication of structures with less than 10 nm separation. The exposure mechanism is investigated by transmission electron microscopy and diffraction. A crystallization process induced by the electron bombardment is clearly evidenced. A model based on the amorphous to crystalline phase transition induced by electron irradiation is proposed to account for the experimental observations.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
