Abstract
The advantage of high voltage electron beam lithography in submicron VLSI fabrication is outlined. Continuously-moving-stage EB systems with small deflection width are suited to high voltage electron beam machines. At 50 kV, the following experimental results were obtained: 1. (1) 0.75 μm lines of PMMA are formed on a 0.8 μm step. 2. (2) Dimension deviation from designed size due to proximity effect is below ±0.1 μm for line or space, ranging from 0.25 μm to 30 μm, adjacent to a large area. 3. (3) Dosages, required to obtain a resist pattern with vertical walls, are 50μC/cm 2 at 50 kV and 100 μC/cm 2 at 20 kV. 4. (4) Accurate position detection for a mark covered with thick overlayers can be achieved at 50 kV, but not at 20 kV.
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