Abstract
A novel nanocomposite photoresist was synthesized and characterized for use in both low and high voltage electron beam lithography. This resist system is shown to display the ideal combination of both enhanced etch resistance and enhanced sensitivity required to satisfy both low and high voltage patterning applications. Resist sensitivity was enhanced by the direct incorporation of a photoacid generating monomer into the resist polymer backbone while the etch resistance of the material was improved by copolymerization with a POSS containing monomer.
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