Abstract
Planar 4H-SiC p-n junctions with floating guard rings have been fabricated. The main junction and the rings were formed by room temperature boron implantation followed by high temperature annealing. The breakdown voltage of the p-n junctions is 1800 V, which twice exceeds that of similar junctions without guard rings and reaches 72% of the calculated breakdown voltage of a plane-parallel p-n junction with the same epitaxial layer parameters
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