Abstract
We obtained a series of experimental results showing the effects of floating guard rings (FGRs) in InGaAs-InGaAsP-InP separate absorption, grading, charge, and multiplication avalanche photodiodes. It was confirmed from the scanned photocurrent curves that the essential role of FGRs is to disperse the curved equipotential lines at the lateral junction periphery and to give a low field route for a carrier beneath the FGRs. FGR effect mainly depends on guard ring spacing and it also depends on the magnitude of the applied bias. In our optimum guard ring condition, the current gain at the active planar region found to be 1.4 times larger than that at the curved edge.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
