Abstract
Nitrogen doped indium tin oxide (ITO) and platinum thin films were fabricated on alumina substrate by magnetron sputtering and formed thin film thermocouples (TFTCs) with stencil mask. After annealing in N2 or air, the thermoelectric properties of the TFTCs were calibrated for multiple cycles with different calibration atmospheres. The Seebeck coefficient of ITO thin films at high temperature was obtained. The element segregation and oxygen vacancy was stabilized by the formation of oxynitrides in ITO films. And their effects on the Seebeck coefficient of ITO films was discussed.
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