Abstract
Abstract Indium tin oxide (ITO) films were deposited on polycarbonate CR39 substrate using DC magnetronsputtering. ITO thin films were deposited at room temperature because glass-transition temperature of CR39substrate is 130 o C ITO thin films are used as bottom and top electrodes and for organic thin film transparenttransistor (OTFT). The electrodes electrical properties of ITO thin films and their optical transparencyproperties in the visible wavelength range (300-800 nm) strongly depend on the volume of oxygen percent. Theoptimum resistivity and transparency of ITO thin film electrode was achieved with a 75 W plasma power, 10% volume of oxygen and a 27 nm/min deposition rate. Above 85% transparency in the visible wavelength range(300-800 nm) was measured without post annealing process, and resistivity as low as 9.83 × ™10 −4 Ωcm wasmeasured at thickness of 300 nm.Key wordsIndium tin oxide (ITO), CR39, Organic thin film transistor (OTFT), thin film 1. Introduction Indium tin oxide (ITO) thin films were found in a widerange of optoelectronic applications such as transparentelectrical contact electrodes in display, touch screens,thin film solar cells and organic light emitting diodes(OLED).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
